Conference Proceeding

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Shanghai Jiao Tong Univ., Shanghai;
01/2007; DOI:10.1109/APMC.2006.4429456 ISBN: 978-4-902339-11-6 pp.433-436 In proceeding of: Microwave Conference, 2006. APMC 2006. Asia-Pacific
Source: IEEE Xplore

ABSTRACT In this paper, numerical investigation on GaN HFETs is carried out using hybrid finite element method (FEM) which combines the FEM with the preconditioned conjugated gradient technique. The maximum temperatures of the HFETs operating under continuous-waves (CW) and pulsed-waves (PW) are both captured accurately. The effects of temperature- dependent thermal conductivities of the materials on the temperature distribution are also studied and compared for different substrate materials, such as sapphire, silicon, and SiC.

0 0
 · 
0 Bookmarks
 · 
21 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

different substrate materials
 
hybrid finite element method
 
maximum temperatures
 
numerical investigation
 
preconditioned conjugated gradient technique
 
pulsed-waves
 
silicon
 
temperature distribution
 
temperature- dependent thermal conductivities
 

Jianfeng Xu