Conference Proceeding

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

NXP-TSMC Res. center, Leuven
01/2008; DOI:10.1109/IEDM.2007.4418934 ISBN: 978-1-4244-1508-3 In proceeding of: Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Source: IEEE Xplore

ABSTRACT We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by -28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

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Keywords

cell scaling
 
contact area
 
fine line contacts
 
First statistical studies
 
line-type phase-change memory cells
 
minimum Reset currents
 
molten zone
 
phase change material
 
RESET programming
 
significant influence