Conference Proceeding

AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

Manchester Univ., Manchester;
11/2007; DOI:10.1109/EMICC.2007.4412656 ISBN: 978-2-87487-002-6 pp.96-99 In proceeding of: Microwave integrated circuit conference, 2007. eumic 2007. european
Source: IEEE Xplore

ABSTRACT This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420 mA/mm, extrinsic cut-off frequencies (fT) of 28 GHz and maximum oscillations frequencies (fmax) of 46C Hz are measured on 300 mum gate periphery device. At 2.15 GK/., an output power density of 1 W/mm associated to a power added efficiency of 17% and a linear gain of 24 dB are achieved lit VDS = 30 V and VGS = -1.2 V.

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Keywords

300 mum gate periphery device
 
extrinsic cut-off frequencies
 
gate technology
 
linear gain
 
maximum oscillations frequencies
 
microwave power applications
 
Output current densities
 
SiN mask