Conference Paper

Linear cellular antenna switch for highly-integrated SOI front-end

RFMD Scotts Valley, Scotts Valley
DOI: 10.1109/SOI.2007.4357884 Conference: SOI Conference, 2007 IEEE International
Source: IEEE Xplore

ABSTRACT A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz. A CMOS-compatible SOI SP6T cellular antenna switch achieves linearity heretofore requiring more costly sapphire or GaAs substrate materials. The prototype TX path P-o.ids is 41 dBm and harmonics are 79 dBc at 34 dBm output power. A low insertion loss of 0.8 dB and isolation of 40 dB is obtained at 900 MHz.

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