Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.

Nano Quantum Electronic Laboratory, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
Journal of Nanoscience and Nanotechnology (Impact Factor: 1.34). 05/2010; 10(5):3609-13. DOI: 10.1166/jnn.2010.2273
Source: PubMed

ABSTRACT A compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire. The threshold voltage, the mobility, and the doping density of the Si nanowire and the Schottky barrier height at a metal-Si nanowire heterointerface in the nanowire FET were estimated by using the theoretical model.

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Jun 1, 2014