Conference Paper

Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC

Southern Methodist Univ., Dallas
DOI: 10.1109/REDW.2007.4342553 Conference: Radiation Effects Data Workshop, 2007 IEEE
Source: IEEE Xplore

ABSTRACT A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times1015 protons/cm2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.

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Available from: Tiankuan Liu, Jul 04, 2015
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