Conference Paper

Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

STMicroelectron., Catania
DOI: 10.1109/NVSMW.2007.4290574 Conference: Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Source: IEEE Xplore

ABSTRACT In this work we have studied sub-50 nm finFET nano-floating gate (NFG) Flash (FINFLASH) memory cells. Si nanocrystals have been used as NFG storage medium. Very low aspect ratio FINFLASH cells with fin height down to 20 nm have been investigated.

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    ABSTRACT: a b s t r a c t Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler–Nordheim tunneling program–erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridi-mensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate.
    Solid-State Electronics 08/2010; · 1.48 Impact Factor

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