Conference Proceeding

The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples studied by hard X-ray photoelectron spectroscopy (HX-PES)

Ultimate Junction Technol. Inc., Osaka;
07/2007; DOI:10.1109/IWJT.2007.4279944 ISBN: 1-4244-1104-1 pp.49-52 In proceeding of: Junction Technology, 2007 International Workshop on
Source: IEEE Xplore

ABSTRACT We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed excellent recrystallization after spike RTA. HX-PES can be very useful for optimizing the semiconductor doping and thermal activation processes for advanced micro-devices that have the junction depth shallower than 10 nm.

0 0
 · 
0 Bookmarks
 · 
21 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

As-doped I/I sample
 
as-doped PD sample
 
excellent recrystallization
 
higher hole density
 
induced carrier trap
 
junction depth shallower
 
low energy ion implanted silicon substrate
 
lower
 
micro-devices
 
PD
 
PD sample
 
semiconductor
 
Si 1s
 
spike RTA
 
superior impurity activation
 
thermal activation processes