An extended defect in graphene as a metallic wire

Department of Physics, University of South Florida, Tampa, FL 33620, USA.
Nature Nanotechnology (Impact Factor: 34.05). 03/2010; 5(5):326-9. DOI: 10.1038/nnano.2010.53
Source: PubMed


Many proposed applications of graphene require the ability to tune its electronic structure at the nanoscale. Although charge transfer and field-effect doping can be applied to manipulate charge carrier concentrations, using them to achieve nanoscale control remains a challenge. An alternative approach is 'self-doping', in which extended defects are introduced into the graphene lattice. The controlled engineering of these defects represents a viable approach to creation and nanoscale control of one-dimensional charge distributions with widths of several atoms. However, the only experimentally realized extended defects so far have been the edges of graphene nanoribbons, which show dangling bonds that make them chemically unstable. Here, we report the realization of a one-dimensional topological defect in graphene, containing octagonal and pentagonal sp(2)-hybridized carbon rings embedded in a perfect graphene sheet. By doping the surrounding graphene lattice, the defect acts as a quasi-one-dimensional metallic wire. Such wires may form building blocks for atomic-scale, all-carbon electronics.


Available from: Matthias Batzill
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    • "So far, universal existence of GBs in graphene have also been confirmed in the transmission electron microscopy (TEM) and optical microscopy measurements [20] [21]. Recently, Lahiri, et al. [22] reported that structurally well-defined one-dimensional topological defect could be controllably introduced in epitaxial graphene, and found that such defects would yield a pronounced perturbation into the electronic structure. Undoubtedly, the domain size and the creation of localized electronic state upon a defect line will affect the electrical quality significantly. "

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    • "Defects on two-dimensional (2D) materials were often considered as hindrance despite of potential controllability in electromagnetic and mechanical property of the materials (Lahiri et al., 2010; Yazyev & Louie, 2010; Attaccalite et al., 2011; Zhou et al., 2013a). For example, the actual performance of graphene devices failed to satisfy the expectations due to the inherent defect in them (Li et al., 2009). "
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    ABSTRACT: Two-dimensional (2D) materials containing hole defects are a promising substitute for conventional nanopore membranes like silicon nitride. Hole defects on 2D materials, as atomically thin nanopores, have been used in nanopore devices, such as DNA sensor, gas sensor and purifier at lab-scale. For practical applications of 2D materials to nanopore devices, researches on characteristics of hole defects on graphene, hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2) have been conducted precisely using transmission electron microscopy (TEM). Here, we summarized formation, features, structural preference and stability of hole defects on 2D materials with atomic-resolution TEM images and theoretical calculations, emphasizing the future challenges in controlling the edge structures and stabilization of hole defects. Exploring the properties at the local structure of hole defects through in-situ experiments is also the important issue for the fabrication of realistic 2D nanopore devices.
    Applied Microscopy 09/2015; 45(3):107-114. DOI:10.9729/AM.2015.45.3.107
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    • "An extended line of defects (ELD) in graphene has been found using nickel [111] as substrate [51]. The authors propose that the defects involved are a combination of two pentagons and one octagon (5–8–5) forming a nanowire embedded in the graphene matrix (see Figure 9 "

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