Conference Proceeding

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

IBM, Hopewell Junction
05/2007; DOI:10.1109/VTSA.2007.378955 ISBN: 1-4244-0585-8 pp.1 - 2 In proceeding of: VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on
Source: IEEE Xplore

ABSTRACT Addition of Pt to Ni silicide produces a robust [NixPt(1-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.

0 0
 · 
0 Bookmarks
 · 
25 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

high-performance 65 nm SOI technologies
 
improved morphological stability
 
monosilicide texture
 
Ni silicide
 
reduced tendency
 
significant variations