The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution
Department of Crystalline Materials Science, Nagoya University, Nagoya, Aichi, JapanDOI: 10.1109/ICIPRM.2006.1634150 Conference: Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Source: IEEE Xplore
Emission wavelength from a confinement quantum dot (QD) strongly depends on its size and composition. As the application of the wideband light source for optical coherence tomography (OCT), we fabricated InP and InAsP quantum dots on GaInP lattice-matched to GaAs(001) with an intentionally broadened size and composition distribution. The growth technique is droplet hetero-epitaxy using organometallic vapor phase epitaxy system. In particular, InAsP QDs showed a broad PL spectrum with the central wavelength at 845 nm and a large FWHM of 100 nm. This FWHM value improves the resolution of OCT by 4-5 times from the conventional one.
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