Conference Proceeding

The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution

Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan;
06/2006; DOI:10.1109/ICIPRM.2006.1634150 ISBN: 0-7803-9558-1 pp.208- 210 In proceeding of: Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Source: IEEE Xplore

ABSTRACT Emission wavelength from a confinement quantum dot (QD) strongly depends on its size and composition. As the application of the wideband light source for optical coherence tomography (OCT), we fabricated InP and InAsP quantum dots on GaInP lattice-matched to GaAs(001) with an intentionally broadened size and composition distribution. The growth technique is droplet hetero-epitaxy using organometallic vapor phase epitaxy system. In particular, InAsP QDs showed a broad PL spectrum with the central wavelength at 845 nm and a large FWHM of 100 nm. This FWHM value improves the resolution of OCT by 4-5 times from the conventional one.

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Keywords

broad PL spectrum
 
composition distribution
 
confinement quantum dot
 
Emission wavelength
 
FWHM value
 
GaInP lattice-matched
 
growth technique
 
InAsP quantum dots
 
optical coherence tomography
 
organometallic vapor phase epitaxy system
 
wideband light source