Conference Paper

Back-End-Of-Line Poly-Sige Disk Resonators

Berkeley Sensor and Actuator Center, EECS Dept., University of California
DOI: 10.1109/MEMSYS.2006.1627779 In proceeding of: Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Source: IEEE Xplore

ABSTRACT This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.

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