Back-End-Of-Line Poly-Sige Disk Resonators
Berkeley Sensor and Actuator Center, EECS Dept., University of California
DOI: 10.1109/MEMSYS.2006.1627779 Conference: Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.
Available from: cornell.edu
- "To verify the feasibility of using DI water for aqueous transduction of MEMS resonators, we used a previously fabricated 50 nm air-gap poly- SiGe contour mode disk resonator (Fig. 1) . The resonator has Q = 5,300 and R X = 517 kȍ in air with a 5V polarization voltage (Fig. 2). "
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ABSTRACT: This paper demonstrates an electrostatic transducer for lateral contour-mode resonators in which the transduction gaps are filled with a liquid dielectric (water) having much higher permittivity than air ( kappa<sub>water</sub> = 80.1). Aqueous transduction is more efficient than air-gap transduction (lower motional impedance) and has a higher frequency tuning range compared than solid-dielectric transduction. We have demonstrated a 42 MHz poly-SiGe disk resonator with de-ionized (Dl) water confined to the electrode gaps. The resonator has a measured quality factor (Q) of 3,800, motional impedance (Rx) of 3.9 kOmega and 3% series frequency tuning range.
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International; 07/2007
Available from: Joydeep Basu
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ABSTRACT: Over the past few years, microelectromechanical system (MEMS) based on-chip resonators have shown significant potential for
sensing and high frequency signal processing applications. This is due to their excellent features like small size, large
frequency-quality factor product, low power consumption, low cost batch fabrication, and integrability with CMOS IC technology.
Radio frequency communication circuits like reference oscillators, filters, and mixers based on such MEMS resonators can be
utilized for meeting the increasing count of RF components likely to be demanded by the next generation multi-band/multi-mode
wireless devices. MEMS resonators can provide a feasible alternative to the present-day well-established quartz crystal technology
that is riddled with major drawbacks like relatively large size, high cost, and low compatibility with IC chips. This article
presents a survey of the developments in this field of resonant MEMS structures with detailed enumeration on the various micromechanical
resonator types, modes of vibration, equivalent mechanical and electrical models, materials and technologies used for fabrication,
and the application of the resonators for implementing oscillators and filters. These are followed by a discussion on the
challenges for RF MEMS technology in comparison to quartz crystal technology; like high precision, stability, reliability,
need for hermetic packaging etc., which remain to be addressed for enabling the inclusion of micromechanical resonators into
tomorrow’s highly integrated communication systems.
Microsystem Technologies 10/2011; 17(10):1557-1580. DOI:10.1007/s00542-011-1332-9 · 0.88 Impact Factor
Available from: eecs.berkeley.edu
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