Back-End-Of-Line Poly-Sige Disk Resonators
ABSTRACT This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.
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ABSTRACT: Microfabrication technologies initially developed for integrated electronics have been successfully applied to batch-fabricate a wide variety of micromechanical structures for sensing, actuating, or signal-processing functions such as filters. By appropriately combining the deposition, etching, and lithography steps for microelectromechanical devices with those needed for microelectronic devices, it is possible to fabricate an integrated microsystem in a single process sequence. This paper reviews the strategies for cofabrication, with an emphasis on modular approaches that do not mix the two process sequences. The integrated processes are discussed using examples of physical sensors (infrared imagers and inertial sensors), chemical and biochemical sensors, electrostatic and thermal actuators for displays and optical switching, and nonvolatile memories. By adding new functionality to integrated electronics, the use of microelectromechanical systems is opening new applications in sensing and actuating, as well as enhancing the performance of analog and digital integrated circuits.Proceedings of the IEEE 03/2008; · 6.91 Impact Factor
Conference Paper: Aqueous Transduction of Poly-Sige Disk Resonators[Show abstract] [Hide abstract]
ABSTRACT: This paper demonstrates an electrostatic transducer for lateral contour-mode resonators in which the transduction gaps are filled with a liquid dielectric (water) having much higher permittivity than air ( kappa<sub>water</sub> = 80.1). Aqueous transduction is more efficient than air-gap transduction (lower motional impedance) and has a higher frequency tuning range compared than solid-dielectric transduction. We have demonstrated a 42 MHz poly-SiGe disk resonator with de-ionized (Dl) water confined to the electrode gaps. The resonator has a measured quality factor (Q) of 3,800, motional impedance (Rx) of 3.9 kOmega and 3% series frequency tuning range.Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International; 07/2007
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ABSTRACT: This invited paper reviews recent progress about Silicon Germanium Technology for the integration of MEMS resonators with CMOS electronics and its application to frequency generation. Topics include process issues, device performances, and system level advantages brought by monolithic integrationInternational Frequency Control Symposium and Exposition, 2006 IEEE; 01/2006