Conference Proceeding

μtrench phase-change memory cell engineering and optimization

STMicroelectronics, Agrate Brianza, Italy
10/2005; DOI:10.1109/ESSDER.2005.1546648 ISBN: 0-7803-9203-5 pp.313 - 316 In proceeding of: Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Source: IEEE Xplore

ABSTRACT Phase-change memory (PCM) cell is the most promising technology as post-flash nonvolatile memory (NVM). Among the different proposed cell structures, μtrench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized μtrench cell with a programming current of 450 μA at 1.5 V and a set resistance of 5 kΩ is finally presented.

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Keywords

cell structure
 
cell structures
 
fine tuning capability
 
geometric dimensions
 
good dimensional control
 
low programming currents
 
optimization
 
PCM electrical parameters
 
Phase-change memory
 
post-flash nonvolatile memory
 
promising technology
 
set resistance
 
theoretical analysis