Conference Paper
Silicon Raman amplifiers, lasers, and their applications
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
DOI: 10.1109/GROUP4.2005.1516397 Conference: Group IV Photonics, 2005. 2nd IEEE International Conference on Source: IEEE Xplore

Article: Nonlinear propagation in siliconbased plasmonic waveguides from the standpoint of applications.
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ABSTRACT: Siliconbased plasmonic waveguides can be used to simultaneously transmit electrical signals and guide optical energy with deep subwavelength localization, thus providing us with a well needed connecting link between contemporary nanoelectronics and silicon photonics. In this paper, we examine the possibility of employing the large thirdorder nonlinearity of silicon to create active and passive photonic devices with siliconbased plasmonic waveguides. We unambiguously demonstrate that the relatively weak dependance of the Kerr effect, twophoton absorption (TPA), and stimulated Raman scattering on optical intensity, prevents them from being useful in μmlong plasmonic waveguides. On the other hand, the TPAinitiated freecarrier effects of absorption and dispersion are much more vigorous, and have strong potential for a variety of practical applications. Our work aims to guide research efforts towards the most promising nonlinear optical phenomena in the thriving new field of siliconbased plasmonics.Optics Express 01/2011; 19(1):20617. · 3.55 Impact Factor  [Show abstract] [Hide abstract]
ABSTRACT: The nonlinear process of stimulated Raman scattering is important for silicon photonics as it enables optical amplification and lasing. To understand the dynamics of silicon Raman amplifiers (SRAs), a numerical approach is generally employed, even though it provides little insight into the contribution of different SRA parameters to the signal amplification process. In this paper, we solve the coupled pumpsignal equations analytically under realistic conditions, and derive an exact formula for the envelope of a signal pulse when picosecond optical pulses are amplified inside a SRA pumped by a continuouswave laser beam. Our solution is valid for an arbitrary pulse shape and fully accounts for the Raman gaindispersion effects, including temporal broadening and groupvelocity reduction (a slowlight effect). It can be applied to any pumping scenario and leads to a simple analytic expression for the maximum optical delay produced by the Raman dispersion in a unidirectionally pumped SRA. We employ our analytical formulation to study the evolution of optical pulses with Gaussian, exponential, and Lorentzian shapes. The ability of a Gaussian pulse to maintain its shape through the amplifier makes it possible to realize solitonlike propagation of chirped Gaussian pulses in SRAs. We obtain analytical expressions for the required linear chirp and temporal width of a solitonlike pulse in terms of the net signal gain and the Ramandispersion parameter. Our results are useful for optimizing the performance of SRAs and for engineering controllable signal delays.Optics Express 08/2010; 18(17):1832438. · 3.55 Impact Factor  [Show abstract] [Hide abstract]
ABSTRACT: Increasing the amplifying efficiency in silicononinsulator waveguides plays a crucial role in future adaptation of this technology for integrated optics applications. Such improvements not only lead to a reduced overall footprint size but also the overall reduction in the operating energy consumption of the device. In this paper, we address the design optimization of silicon optical amplifiers working in the continuous wave domain. We seek to optimize the efficiency of a silicon optical amplifier by varying the crosssection area along the waveguide length that coerces judicious minimization of the pernicious influence of freecarrier absorption and twophoton absorption on Raman amplification. Using a recently proposed semianalytical technique, we recasted the above problem as a boundaryvalue problem that contains eight coupled nonlinear differential equations for four waves' powers and four auxiliary functions. The numerical solution of these equations allows one to find the axial profile of the effective mode area (EMA), providing the largest output signal power for given waveguide length, input pump power and a preset, inputfacet EMA. We have illustrated utility of our method by applying it to several practically realizable amplification scenarios. In particular, optimizing the EMA profiles with different inputfacet EMAs, we calculated the optimum signal gain of a silicon optical amplifier with a given (i.e., preset) amplifier length.IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 4.08 Impact Factor
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