Conference Proceeding

PBTI & HCI characteristics for high-k gate dielectrics with poly-si & MIPS (metal inserted poly-si stack) gates

02/2005; DOI:10.1109/RELPHY.2005.1493061 ISBN: 0-7803-8803-8 pp.50 - 54 In proceeding of: Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Source: IEEE Xplore

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