Conference Proceeding

Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

Semisouth Labs. Inc., Starkville, MS, USA
06/2005; DOI:10.1109/ISPSD.2005.1487993 ISBN: 0-7803-8890-9 pp.231 - 234 In proceeding of: Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Source: IEEE Xplore

ABSTRACT In this paper, we present an investigation on the different aspects of the performance of a 600V, 3A 4H-SiC vertical-trench junction field effect transistor (VJFET) at cryogenic and high temperatures. Some critical device physics related factors that affect the DC characteristics and switching performance of the device are explored. In particular, the experimental low-temperature performance of 4H-SiC VJFETs (down to 30K or -243°C) is presented for the first time to our knowledge.

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Keywords

3A 4H-SiC vertical-trench junction field effect transistor
 
4H-SiC VJFETs
 
critical device physics
 
experimental low-temperature performance
 
temperatures
 
VJFET