A CMOS 2.45-GHz radio frequency identification tag IC with read/write memory
Inst. of Microelectron., Singapore, SingaporeDOI: 10.1109/RFIC.2005.1489811 Conference: Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Source: IEEE Xplore
A 2.45-GHz RFID tag chip was designed on standard 0.25- μm CMOS process. Using only MOS devices, the low-Vt rectifier circuit produces 100 μW of power with 2 dBm input. The tag IC with bidirectional communication and anti-collision features can be read from a distance of up to 15 cm under a reader power of 250 mW. The die area of 0.79 mm2 includes a 128-bit rewritable non-volatile memory.
Conference Paper: Air-interfacing microwave passive RFID tag in bulk CMOS[Show abstract] [Hide abstract]
ABSTRACT: Overcoming the price hurdle that hampers mass-scale RFID adoption, this paper examines the architectural trade-offs as well as design issues involved in the development of a passive RFID tag IC targeted for low cost high volume deployment. Peculiar air-interfacing problems related to power rectification, data demodulation and backscattering modulation are addressed through the discussion of a design example whereby a 2.45-GHz RFID tag IC has been implemented in standard CMOS process.Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, 2005. Proceedings. 2005 IEEE International Workshop on; 01/2005
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ABSTRACT: High-performance single polysilicon electrically erasable programmable read-only memories (EEPROMs) with stacked metal-insulator-metal capacitor as a control gate are investigated. The thickness of the tunnel oxide and the length of the floating gate channel of the fabricated devices were 52 Å and 0.24 μm, respectively. The effective control gate coupling ratio of the proposed EEPROM cell was higher than that of cells with n-well control gate because of the absence of depletion capacitance in the n-well silicon region. The experimental results showed that the program speed of the proposed cells were faster than those of the conventional n-well control gate cells. In addition, the proposed cells had threshold voltage shifts of 3.5 V between program and erase states. Furthermore, there were threshold voltage shifts of 3.0 V without degradation of the read currents after 1000 program/erase cycles.IEEE Electron Device Letters 05/2006; 27(4-27):294 - 296. DOI:10.1109/LED.2006.871838 · 2.75 Impact Factor
Conference Paper: A 2.45-GHz RFID tag with on-chip antenna[Show abstract] [Hide abstract]
ABSTRACT: Powered exclusively by on-chip antenna, a 2.45-GHz RFID tag with RF read/write capabilities has been realized in 0.13-mum CMOS process. By eliminating external antenna, the 0.5-mm<sup>2</sup> tag presents a low-cost alternative for achieving high-end features such as bi-directional communication, anti-collision and rewritable memory that are attainable only with off-chip solutionsRadio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE; 07/2006
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