Conference Paper

Issues and optimization of millisecond anneal process for 45 nm node and beyond

SoC Res. & Dev. Center, Toshiba Corp. Semicond. Co., Kanagawa, Japan
DOI: 10.1109/.2005.1469245 Conference: VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Source: IEEE Xplore

ABSTRACT We have investigated millisecond anneal, such as laser spike annealing (LSA) and flash lamp annealing (FLA), which substitute for spike RTA as a dopant activation technology of source/drain extension for 45 nm node. Three key issues of gate leakage current, junction leakage current and pattern dependence were discussed from the integration and CMOSFETs performance viewpoint. We reported that LSA is the leading candidate for 45 nm node and beyond.

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