Conference Paper

Losses in CuInSe2-based thin film monolithic tandem solar cells

Inst. of Energy Conversion, Delaware Univ., USA
DOI: 10.1109/PVSC.2005.1488111 In proceeding of: Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Source: IEEE Xplore

ABSTRACT Two critical aspects for the development of tandem solar cells using CuInSe2-alloy materials are addressed. First a structure for monolithic tandem solar cells using wide and narrow bandgap Cu(InGa)Se2-alloys in the top and bottom cells is demonstrated. This structure uses an ITO layer as both back contact to the wide bandgap Cu(InGa)Se2 and interconnect to the bottom cell. Three different options for the emitter in the bottom cell are compared. Second, progress on the wide bandgap cell using the Cu(InGa)(SeS)2 system is presented, and different loss mechanisms in Cu(InGa)Se2 and CuInS2 based devices are identified. Efficiency with Cu(InGa)Se2 is reduced by lower optical absorption and poor current collection while with CuInS2, it is reduced by interface recombination.

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    ABSTRACT: Tandem solar cells fabricated from thin films provide promise of improved efficiency while keeping the processing costs low. CdSe as top cell are investigated in this work. CIGS has been a standardized process with lab efficiencies reaching 18% [53]. This dissertation focuses on the development of conductive window layer for the development of a high performance, high bandgap solar cell. ZnSe, Cu2-xSe, and ZnSexTe1-x are investigated as viable window layers of the top cell. ZnSe in undoped form forms a good junction with CdSe films, but the Voc from these devices could never exceed the 360mV mark, while the current densities approached 17.5mA/cm2 [61].To improve Voc's, the high contact energy at the ZnSe/Cu interface has to be overcome by replacing Cu with a metal having higher work function or doping the window layer to form a tunneling contact with Copper. Deposition of ZnSe from binary sources in presence of nitrogen plasma resulted in films with proper stoichiometry. However, doping could not be accomplished. ZnTe is easily dopable, and was the next alternative. ZnTe doping in presence of Nitrogen plasma resulted in Zn rich films. Hence doping of the ternary compound ZnSexTe1-x was considered. This work focuses on studying the effects of compositional variation on the conductivity of the ZnSexTe1-x films. ZnSexTe1-x films were doped using Nitrogen. Films were deposited by co-evaporation from ZnTe, ZnSe and Se sources. Te/Se ratio was varied by varying the ZnTe thickness and Se Thickness. Films with Zn/Group VI ratio close to 1 were measured for conductivity using IV measurements. Highest conductivity of 2* 10 -8 O-cm was obtained at ZnSe, ZnTe, and Se thicknesses of 2000A, 1500A, and 500A respectively. The actual carrier concentration could be concealed by the current limiting Cu contacts. All films with Zn/Group VI ratio close to 1 showed slight conductivity in the 10-10 O-cm range. Layered ZnSexTe1-x Films doped with Nitrogen had targeted Zn/Group VI ratio of 1, but with a higher Te content. The films were also slightly conductive, in the 10-10 O-cm range. The mechanism limiting the doping in all the films seems to be the same.