Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science,University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, USA. Optics Letters
(Impact Factor: 3.29).
02/2010; 35(4):547-9. DOI: 10.1364/OL.35.000547
The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at lambda=1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of approximately 420.
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