Conference Proceeding

Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing

Technische Univ. Berlin, Germany
DOI:10.1109/GROUP4.2004.1416657 ISBN: 0-7803-8474-1 pp.72 - 74 In proceeding of: Group IV Photonics, 2004. First IEEE International Conference on
Source: IEEE Xplore

ABSTRACT We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.

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Keywords

anisotropically etched cleaving grooves
 
different techniques
 
dry etching
 
facets
 

M. Schnarrenberger