Conference Proceeding

A highly efficient CMOS charge pump for 1.2 V supply voltage

Dept. of Electron.-DEA, Brescia Univ., Italy
12/2004; DOI:10.1109/TENCON.2004.1414921 ISBN: 0-7803-8560-8 pp.270 - 273 Vol. 4 In proceeding of: TENCON 2004. 2004 IEEE Region 10 Conference, Volume: D
Source: IEEE Xplore

ABSTRACT In this paper a new integrated charge pump is presented, suitable for current 1.2 V CMOS processes. It is based on both n-MOS and p-MOS pass-transistors with dynamic control of the gate and body voltages. By controlling the gate and the bulk of the pass-transistors, the voltage loss due to the device threshold is removed and the charge is pumped from one stage to the other with negligible voltage drop. The proposed charge pump can be integrated in a standard low-voltage technology: the low-voltage transistors and the simple 2-phase clocking scheme allow the use of higher frequencies, compared to conventional solutions, leading to higher currents, high efficiency and smaller area.

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Keywords

body voltages
 
CMOS processes
 
conventional solutions
 
dynamic control
 
higher currents
 
low-voltage transistors
 
negligible voltage drop
 
p-MOS pass-transistors
 
pass-transistors
 
smaller area
 
standard low-voltage technology
 
voltage loss
 

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