Dynamic behavior optimization of the junctions with SIPOS layer termination
Fac. of Electr. Eng., Valahia Univ. of Targoviste, RomaniaDOI: 10.1109/SMICND.2004.1403019 Conference: Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International, Volume: 2
Source: IEEE Xplore
In the power devices domain, one of the key problem is the edge termination improving. This work proposes an optimisation of the structures with field electrode and SIPOS layer (semi-insulating polycrystalline silicon) in order to accomplish a maximum of the breakdown voltage with a smallest area consumed. For these kinds of structures physical models and some simulations regarding the dynamic behaviour are presented.
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