Conference Proceeding

300 mm SGOI/strain-Si for high-performance CMOS

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA;
11/2004; DOI:10.1109/SOI.2004.1391545 ISBN: 0-7803-8497-0 pp.37 - 38 In proceeding of: SOI Conference, 2004. Proceedings. 2004 IEEE International
Source: IEEE Xplore

ABSTRACT In this article, a manufacturable material technology has been developed to produce highly uniform 300 mm SSOI substrates. The focus of this work has been on reducing defects in SGOI and strain Si layers, while maintaining high degree of relaxation/strain in these layers. Furthermore, physics of SGOI formation has been understood to the extent that key physical properties of the final SGOI layer can be accurately predicted based on the knowledge of the initial structure and subsequent processing.

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Keywords

final SGOI layer
 
initial structure
 
key physical properties
 
layers
 
manufacturable material technology
 
SGOI
 
SGOI formation
 
strain Si layers
 

A. Reznicek