Conference Proceeding

Coherent transport of hole in p type semiconductive carbon nanotube

ISIR, Osaka Univ., Japan
07/2004; DOI:10.1109/DRC.2004.1367824 ISBN: 0-7803-8284-6 pp.141 - 142 vol.1 In proceeding of: Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Source: IEEE Xplore

ABSTRACT In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 μm at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

0 0
 · 
0 Bookmarks
 · 
25 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

ballistic transport
 
coexistence
 
Coulomb diamond characteristics
 
drain current-gate voltage characteristics
 
gate type carbon nanotube field effect transistor
 
K
 
periodic negative differential conductance