Conference Proceeding

STM observations of hafnium carbide thin films as a field emission material

Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan;
08/2004; DOI:10.1109/IVNC.2004.1354942 ISBN: 0-7803-8397-4 pp.146- 147 In proceeding of: Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Source: IEEE Xplore

ABSTRACT We examine microscopic behaviors of work function and topography with scanning tunneling microscopy (STM). Hafnium carbide thin films were deposited on an n-type Si flat substrate by inductively coupled plasma (ICP) assisted magnetron sputtering at the argon pressure of 0.1 Pa. The surface of the films was cleaned by in-situ argon ion sputtering before STM observations. The ion current, duration and acceleration voltage were set at 3.0 μA, 10 min, and 0.5 keV or 1.0 keV, respectively. The microscopic work function distribution was evaluated from the local tunneling barrier height (LBH) obtained with an STM apparatus. We adopted the tip-modulation method to evaluate LBH where we can obtain topograph and LBH images simultaneously. We also measured the macroscopic work function of these sample surfaces by a Kelvin probe. The work function of the 1.0 keV sputtered surface is 0.4 eV higher than that of the 0.5 keV sputtered surface.

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Keywords

0.5 keV sputtered surface
 
1.0 keV sputtered surface
 
argon pressure
 
ICP
 
in-situ argon ion sputtering
 
ion current
 
Kelvin probe
 
macroscopic work function
 
microscopic work function distribution
 
n-type Si flat substrate
 
Pa
 
sample surfaces
 
scanning tunneling microscopy
 
STM apparatus
 
STM observations
 
tip-modulation method
 
topograph
 
topography
 
work function
 
μA