Conference Paper

Experimental comparison of substrate structures for inductors and transformers

Facolta di Ingegneria, Universita di Catania, Italy
DOI: 10.1109/MELCON.2004.1346793 Conference: Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean, Volume: 1
Source: IEEE Xplore

ABSTRACT An experimental comparison of the substrate structures for silicon inductive devices is proposed. On-wafer measurements for both inductors and stacked transformers revealed that better performance is achieved by exploiting a n+-doped buried layer as a patterned ground shield. The proposed solution increases inductor quality factor and allows a wide operative bandwidth for transformers to be achieved, as well. Moreover, owing to a well-defined RF ground reference, cross-talk phenomena are inherently reduced. Finally, the buried layer patterned ground shield highly simplifies substrate modeling and allows accurate electromagnetic simulations to be easily carried out.

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