Conference Paper

Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Central R&D, STMicroelectronics, Agrate Brianza, Italy
DOI: 10.1109/VLSIT.2004.1345368 Conference: VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Source: IEEE Xplore

ABSTRACT A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new μtrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 μA, endurance of 1011 programming cycles and data retention capabilities for 10 years at 110°C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.

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