Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
ABSTRACT A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new μtrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 μA, endurance of 1011 programming cycles and data retention capabilities for 10 years at 110°C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.
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ABSTRACT: Among the emerging non-volatile technologies, phase change memories (PCM) are the most attractive in terms of both performance and scalability perspectives. The paper reviews the physics underlying PCM operation, the scaling potentials of these devices and some options recently proposed for the cell structure. The paper also addresses the main challenges for the PCM to become fully competitive with standard Flash technology.