Conference Proceeding

Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Central R&D, STMicroelectronics, Agrate Brianza, Italy
07/2004; DOI:10.1109/VLSIT.2004.1345368 ISBN: 0-7803-8289-7 pp.18 - 19 In proceeding of: VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Source: IEEE Xplore

ABSTRACT A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new μtrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 μA, endurance of 1011 programming cycles and data retention capabilities for 10 years at 110°C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.

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Keywords

cell performance
 
data retention capabilities
 
experimental results
 
multi-megabit arrays
 
new μtrench approach
 
optimize array density
 

F. Pellizzer