Conference Paper

A 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
DOI: 10.1109/APASIC.2004.1349478 Conference: Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
Source: IEEE Xplore


To the authors' knowledge, the first 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier (TIA) is presented here. It has been realized in a 0.35 μm SiGe process and its area is 0.45mm2 with pads. Employing inductive series and shunt peaking techniques, the proposed TIA can achieve a transimpedance gain of 61.6dBΩ and the bandwidth of 7.4GHz, while dissipating only 18mW with 1.2V supply. With an equivalent photodiode capacitance of 0.15pF, this TIA shows the input referred noise current density of 22pA/√Hz.

Full-text preview

Available from:
  • [Show abstract] [Hide abstract]
    ABSTRACT: A low power, low delay TIA for on-chip optical fanout applications is presented. Through the testing results, our earlier theoretical predictions on the advantages of optical fanout at short distances are confirmed for small loads.
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: A streak-mode optical sensor in standard 0.35- $mu text{m}$ SiGe BiCMOS technology is presented. The circuit consists of a column of 64 photodetectors coupled to a linear array of transimpedance amplifiers and a 128-deep analog sampling and storage unit. The sweep speed of the sensor is continuously adjustable from 125 ps/pixel to 1 ns/pixel through a closed-loop delay generator. The sensor reaches a total sampling rate of 512 GS/s and a vertical dynamic range of 59 dB. The measured temporal resolution is 465 ps at $lambda =400$ nm. At $lambda =800$ nm, this figure is degraded down to 600 ps due to the increased penetration depth of the incident radiation. In a post-processing phase, the frequency response of the system was equalized, allowing the sensor to exhibit sub-500-ps temporal resolution over the entire visible spectrum. The reported streak-mode optical imager is thus suitable for the recording of nanosecond-order transients over a large range of wavelengths and can be used in applications, such as fluorescence metrology, time-resolved spectroscopy, and optical tomography.
    IEEE Sensors Journal 11/2015; 15(11):6570-6583. DOI:10.1109/JSEN.2015.2462021 · 1.76 Impact Factor