Transient analysis of 3.3kV double-side double-gate IGBTs
ABSTRACT The transient behavior of double-side, double-gate IGBTs (DIGBTs) is presented. Devices fabricated with and without n-buffer layers are compared to conventional IGBTs. Both DIGBT designs show improved EOFF and VCE,ON compared with the 3.3 kV IGBTs. The improvement in VCE,ON is 35% and 46% for devices with and without n-buffer layers, respectively, compared to conventional IGBTs. Improvement in turn-off loss is nearly 80%, achieving EOFF as low as 9 mJ turning off 50 A at 1800 V.