Conference Proceeding

Transient analysis of 3.3kV double-side double-gate IGBTs

Naval Res. Lab., Washington, DC, USA
06/2004; DOI:10.1109/ISPSD.2004.1332918 ISBN: 4-88686-060-5 pp.273 - 276 In proceeding of: Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Source: IEEE Xplore

ABSTRACT The transient behavior of double-side, double-gate IGBTs (DIGBTs) is presented. Devices fabricated with and without n-buffer layers are compared to conventional IGBTs. Both DIGBT designs show improved EOFF and VCE,ON compared with the 3.3 kV IGBTs. The improvement in VCE,ON is 35% and 46% for devices with and without n-buffer layers, respectively, compared to conventional IGBTs. Improvement in turn-off loss is nearly 80%, achieving EOFF as low as 9 mJ turning off 50 A at 1800 V.

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Keywords

conventional IGBTs
 
Devices fabricated
 
DIGBT designs
 
DIGBTs
 
double-gate IGBTs
 
n-buffer layers
 
transient behavior
 
turn-off loss
 

K.D. Hobart