Conference Paper

Compatibility of Dual Metal Gate Electrodes with High-K Dielectrics for CMOS

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
DOI: 10.1109/IEDM.2003.1269290 Conference: Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Source: IEEE Xplore


Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO2 and stacked HfO2/SiO2 gate dielectrics. It was found that the work function values of metal gates on HfO2 and on SiO2 are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and VFB values.

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    • "Thus, the non-linear behaviour of g m3 can be minimized by setting DC bias close to g m3 zero-crossover point. Since g m3 has approximately a balanced magnitude around the zero-crossover point as is clear from Fig. 3(d), the harmonic distortion it generates can be cancelled for a small signal [19]. Fig. 3(d) clearly indicates that, as we move from RRC structure to more prominent device structures, i.e. "
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    ABSTRACT: In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: , , , and figure-of-merit (FOM) metrics; , , IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth () or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.
    Journal of Semiconductor Technology and Science 09/2011; 11(3). DOI:10.5573/JSTS.2011.11.3.169 · 0.52 Impact Factor
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    • "HfO 2 are reduced slightly to 4.89 and 4.34 eV, respectively, while maintaining a large Φ m difference of 0.55 eV, regardless of the underlying gate-dielectric materials. This observation is consistent with the results of Lee et al. [33]. Notably, arsenic preimplantation can still lower the effective Φ m value of MoSi 2 on the HfO 2 gate dielectric. "
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    ABSTRACT: A novel dual-metal gate technology that uses a combination of Mo-MoSi<sub>x</sub> gate electrodes is proposed. An amorphous-Si/Mo stack was fabricated as a gate electrode for the n-channel device. It was thermally annealed to form MoSi<sub>x</sub>. Pure Mo served as the gate electrode for the p-channel device. The work functions of MoSi<sub>x</sub> and pure Mo gates on SiO<sub>2</sub> are 4.38 and 4.94 eV, respectively, which are appropriate for devices with advanced transistor structures. The small increase in the work function (< 20 meV) and the negligible equivalent oxide thickness variation (< 0.08 nm) after rapid thermal annealing at 950 °C for 30 s also demonstrate the excellent thermal stabilities of Mo and MoSi<sub>x</sub> on SiO<sub>2</sub>. Additional arsenic ion implantation prior to silicidation was demonstrated further to lower the work function of MoSi<sub>x</sub> to 4.07 eV. This approach for modulating the work function makes the proposed combination of Mo-MoSi<sub>x</sub> gate electrodes appropriate for conventional bulk devices. The developed dual-metal-gate technology on HfO<sub>2</sub> gate dielectric was also evaluated. The effective work functions of pure Mo and undoped MoSi<sub>x</sub> gates on HfO<sub>2</sub> are 4.89 and 4.34 eV, respectively. A considerable work-function shift was observed on the high-κ gate dielectric. The effect of arsenic preimplantation upon the work function of the metal silicide on HfO<sub>2</sub> was also demonstrated, even though the range of modulation was a little reduced.
    IEEE Transactions on Electron Devices 07/2006; 53(6-53):1420 - 1426. DOI:10.1109/TED.2006.874227 · 2.47 Impact Factor
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