Conference Proceeding

Simulation of quantum electronic transport in small devices: a master equation approach

IBM Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
01/2004; DOI:10.1109/IEDM.2003.1269323 ISBN: 0-7803-7872-5 pp.19.3.1 - 19.3.4 In proceeding of: Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Source: IEEE Xplore

ABSTRACT We describe a formulation of quantum electron transport in small devices based on a master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We also present results regarding ballistic and dissipative transport in double gate Si FETs.

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Keywords

derivation
 
dissipative transport
 
double gate Si FETs
 
Liouville-von Neumann equation
 
quantum electron transport
 
subtle issues
 

M.V. Fischetti