Conference Proceeding

Improved performance of FETs with HfAlO<sub>x</sub> gate dielectrics using optimized poly-SiGe gate electrodes

Res. Dept. I, Semicond. Leading Edge Technol. Inc, Tsukuba, Japan;
12/2003; ISBN: 4-89114-037-2 In proceeding of: Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Source: IEEE Xplore

ABSTRACT In this study, we investigated the growth manner of poly-Si/poly-SiGe layered films on HfAlOx films with various Hf contents. The effect of the poly-SiGe gate electrode on FET performances was also evaluated.

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Keywords

growth manner
 
HfAlO<sub>x</sub> films
 
poly-Si/poly-SiGe layered films
 
poly-SiGe gate electrode
 
various Hf contents