Conference Paper

Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

Semicond. Res. & Dev. Center, IBM Microelectron., Hopewell Junction, NY, USA
DOI: 10.1109/GAAS.2003.1252391 In proceeding of: Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Source: IEEE Xplore

ABSTRACT The reliability characteristics of SiGe HBTs with 200 GHz fT and 285 GHz fMAX are shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2×BVCEO. We also present, for the first time, detailed device degradation from accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

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