Conference Paper

Submicron scaling InP/InGaAs single heterojunction bipolar transistor technology with fT > 400 GHz for >100 GHz applications

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
DOI: 10.1109/GAAS.2003.1252397 Conference: Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Source: IEEE Xplore

ABSTRACT We describe a high-speed triple metal InP SHBT technology in this paper. With respect to scaling, we have measured fT from 300 GHz to 450 GHz, and fMAX from 200 GHz to 380 GHz. The proposed technology also features triple metal interconnections, MIM capacitors and NiCr thin film resistors. A CML static frequency divider is designed and simulated from DC to 122 GHz toggling rate at a power consumption of 141 mW.

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    ABSTRACT: Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520 GHz operating at current densities over 1400 kA/cm<sup>2</sup> have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.
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