Conference Proceeding

600V semi-superconjunction MOSFET

Toshiba Corp. Semicond. Co., Kawasaki, Japan
05/2003; DOI:10.1109/ISPSD.2003.1225227 ISBN: 0-7803-7876-8 pp.45 - 48 In proceeding of: Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Source: IEEE Xplore

ABSTRACT New superconjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It is found with experiment and simulation that the proposed structure shows both the lower on-resistance and the softer recovery of body diode than conventional SJ MOSFET. The fabricated Semi-SJ MOSFETs realize Ron as low as 54 mΩcm2 (48 mΩcm2 in calculation) at 690 V breakdown voltage with only half depth of the p-column than the conventional SJ MOSFET. The softness factor of body diode is also improved in the factor of 4.5. The proposed MOSFET is very attractive for H-bridge topology applications such as UPSs and small inverter systems thanks to the low on-resistance and the soft recovery body diode.

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Keywords

body diode
 
conventional SJ MOSFET
 
conventional SJ structure
 
fabricated Semi-SJ MOSFETs
 
H-bridge topology applications
 
lower on-resistance
 
power-switching device
 
remarkable advantage
 
small inverter systems thanks
 
soft recovery body diode
 
softer recovery
 
UPSs
 

W. Saito