Conference Proceeding

Influence of dielectric layers on electromigration results in Cu interconnects

CEA-LETI, Grenoble, France;
07/2003; DOI:10.1109/IITC.2003.1219703 ISBN: 0-7803-7797-4 pp.30- 32 In proceeding of: Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Source: IEEE Xplore

ABSTRACT Electromigration studies showed that an activation energy Ea∼0.9 eV was obtained in Cu interconnects with SiOC as lateral dielectric for linewidths down to 0.28 μm. Failure analysis showed similar EM diffusion path in Cu/SiOC interconnects in comparison to Cu/SiO2 interconnects. Moreover electromigration lifetime is improved when a SiC cap layer is used: lifetime is increased in 0.4 μm by a factor of 4 in comparison to SiN cap layer.

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Keywords

activation energy Ea∼0.9 eV
 
Cu interconnects
 
Cu/SiO<sub>2</sub> interconnects
 
Cu/SiOC interconnects
 
electromigration lifetime
 
Failure analysis
 
lateral dielectric
 
SiC cap layer
 
similar EM diffusion path
 
SiN cap layer
 

L. Arnaud