Article

High-Power Power GaAs and High-Efficiency Ion-Implanted FETs for C and X Bands

Microwave Symposium Digest, MTT-S International 07/1985; 85(1):332- 335.
Source: IEEE Xplore

ABSTRACT C- and X-band multichip operation power GaAs FETs have been developed using an ion implantation technique. Uniformity among chips superior to and breakdown voltage comparable to those of conventional GaAs FETs have been obtained. The 4-chip C-band device, with a total gate width (Wg) of 57.6 mm, delivers a CW output power at 1-dB gain compression (P1dB) of 21 W with 9 dB gain (G) and 42 % power-added efficiency (eta add), and a saturated output power (Psat) of 25 W at 5 GHz. The 8-chip X-band device with Wg=32 mm gives P1dB=10.5 W with G=5 dB and etaadd=25 %, and Psat=12 W at 10 GHz. The channel temperature rise is estimated from IR measurement to be 40 °C and 47 °C at 21-W and 10.5-W output power for the C- and X-band devices, respectively.

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Keywords

1-dB gain compression
 
10.5-W output power
 
4-chip C-band device
 
42 % power-added efficiency
 
5 GHz
 
9 dB gain
 
breakdown voltage comparable
 
channel temperature rise
 
conventional GaAs FETs
 
CW output power
 
IR measurement
 
saturated output power
 
total gate width
 
X-band multichip operation power GaAs FETs