High-Power Power GaAs and High-Efficiency Ion-Implanted FETs for C and X Bands
ABSTRACT C- and X-band multichip operation power GaAs FETs have been developed using an ion implantation technique. Uniformity among chips superior to and breakdown voltage comparable to those of conventional GaAs FETs have been obtained. The 4-chip C-band device, with a total gate width (Wg) of 57.6 mm, delivers a CW output power at 1-dB gain compression (P1dB) of 21 W with 9 dB gain (G) and 42 % power-added efficiency (eta add), and a saturated output power (Psat) of 25 W at 5 GHz. The 8-chip X-band device with Wg=32 mm gives P1dB=10.5 W with G=5 dB and etaadd=25 %, and Psat=12 W at 10 GHz. The channel temperature rise is estimated from IR measurement to be 40 °C and 47 °C at 21-W and 10.5-W output power for the C- and X-band devices, respectively.