Conference Paper

1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

United Monolithic Semicond., Orsay, France
DOI: 10.1109/GAAS.2002.1049025 Conference: Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Source: IEEE Xplore


We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-μm GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P-1 dB=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm2 (1.25×1.8 mm2). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm2 and 8 dB/mm2) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.

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    • "The focus has moved from research to industrial production of these devices. Major contributions come from Triquint, TRW, and UMS [13], [14], [15]. Although being challenged by SiGe HBTs, GaAs PHEMTs still deliver remarkable performance for low-noise applications in receiver circuits up to 100 GHz [16]. "
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    ABSTRACT: We present a review of industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors analyzed by means of numerical simulation. The work includes a comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation.
    Microelectronics, 2004. 24th International Conference on; 06/2004
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    • "However in these systems, the MMIC chipset represents of big fraction of the overall outdoor unit cost. Apart from the driver and power amplifiers, a VSAT power line-up requires a large number of sub-function MMICs like doublers, buffer amplifiers and the mixer itself [2]. Considering GaAs area as the main driving cost for MMICs, we present in this paper the performance of a broadband single chip double conversion mixer MMIC addressing especially the Ka-band VSAT application in the 29.5-30 "
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    ABSTRACT: For use as up-converter in Ka-band VSAT outdoor units, an highly integrated mixer with a double input for balanced operation was designed. This self-bias double conversion mixer MMIC has been designed in order to ease the integration, reduce the size, and finally reach the cost requirements for such systems. The mixer is a multifunction chip, which integrates two frequency doublers and a cold FET mixer for a chip size of only 2.88 mm2. Such a compactness was achieved thanks to a 0.25-µm Pseudomorphic-HEMT process using MIM capacitors over via holes. The mixer exhibits broadband performance, with up-converter loss of only 8 dB for an LO power of +10 dBm and 10-GHz IF frequency.
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