Conference Paper

1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

United Monolithic Semicond., Orsay, France
DOI: 10.1109/GAAS.2002.1049025 Conference: Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Source: IEEE Xplore

ABSTRACT We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-μm GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P-1 dB=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm2 (1.25×1.8 mm2). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm2 and 8 dB/mm2) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.

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