1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs
ABSTRACT We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-μm GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P-1 dB=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm2 (1.25×1.8 mm2). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm2 and 8 dB/mm2) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.
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ABSTRACT: We report a compact and reliable MIMCAP directly on backside through via (MIMCAP-On-Via). The potential performance effects of a capacitor on backside via is explored with changing via density and the total number of vias. The MIMCAP-On-Via reliability was verified using a time dependant dielectric breakdown mode, and its reliability is comparable to a conventional MIMCAP. The thermal stability of epoxy mounted MIMCAP-On-Via test structures was also verified over the -55˚C to 125˚C temperature range with no failures.
Conference Paper: Ku-band Broadband Power Amplifier Designed in 0.2μm GaAs PHEMT Process[Show abstract] [Hide abstract]
ABSTRACT: A Ku-band MMIC of power amplifier has been designed in the standard 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for each stage to improve the stability. Under a single supply voltage of +3.5V, simulations prove that the circuit exhibits a linear output power of more than 28 dBm (P<sub>1dB</sub>); small signal gain of 21 dB, input return loss of less than -15 dB, output return loss of less than -5 dB and power additional efficiency of 23.5%.Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on; 05/2007