Conference Paper

Novel BiCMOS compatible, short channel LDMOS technology for medium voltage RF & power applications

Ericsson Microelectron., Kista, Sweden
DOI: 10.1109/MWSYM.2002.1011552 Conference: Microwave Symposium Digest, 2002 IEEE MTT-S International, Volume: 1
Source: IEEE Xplore


We describe a very short channel, 0.15 μm, LDMOS transistor, with a breakdown voltage of up to 45 V, manufactured in a standard 0.35 μm BiCMOS process. At 1900 MHz and a 12 V supply voltage the 0.4 mm gate width device gives 100 mW output power P1 dB at a drain efficiency of 43%. It has a transducer power gain of more than 20 dB and a current gain cutoff frequency, fT, of 13 GHz. The maximum available gain cutoff frequency, fMAX, is 27 GHz. The LDMOS process module does not affect the performance or models of other devices. We present for the first time a simple way to create high voltage, high performance LDMOS transistors for RF power amplifier use even in a very downscaled silicon technology.

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