Conference Paper

Defects and strain in H<sup>+</sup> and He<sup>+</sup> co-implantedsilicon

Inst. of Metall., Acad. Sinica, Shanghai
DOI: 10.1109/ICSICT.2001.981563 Conference: Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on, Volume: 1
Source: IEEE Xplore


In this paper we studied the process of blistering and exfoliation on the crystal silicon surface and evolution of defects and strain in crystal silicon caused by hydrogen and helium co-implantation. It is shown that H+ and He+ co-implantation would produce a synergistic effect, which decrease the total implantation dose greatly, compared with the single ion implantation. We have also presented the effect of co-implantation and analyzed the different role of H+ and He+ in the process of exfoliation during annealing. It seems that the essential role of hydrogen is to interact chemically with the defects in silicon and create the H-stabled platelets, while the role of helium is to effuse into these platelets and assert pressure on the inner surface of these platelets

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    ABSTRACT: A review of the properties of hydrogen in crystalline semiconductors is presented. The equilibrium lattice positions of the various states of hydrogen are detailed, together with the reactions of atomic hydrogen with shallow and deep level impurities that passivate their electrical activity. Evidence for several charge states of mobile hydrogen provides a consistent picture for both the temperature dependence of its diffusivity and the chemical reactions with shallow level dopants. The electrical and optical characteristics of hydrogen-related defects in both elemental and compound semiconductors are discussed, along with the surface damage caused by hydrogen bombardment. The bonding configurations of hydrogen on semiconductor surfaces and the prevalence of its incorporation during many benign processing steps are reviewed. We conclude by identifying the most important areas for future effort.
    Applied Physics A 06/1987; 43(3):153-195. DOI:10.1007/BF00615975 · 1.70 Impact Factor