Conference Paper

IGCT devices-applications and future opportunities

ABB Ind. AG, Turgi
DOI: 10.1109/PESS.2000.867555 Conference: Power Engineering Society Summer Meeting, 2000. IEEE, Volume: 2
Source: IEEE Xplore


Within 5 years of its introduction, the integrated gate-commutated
thyristor (IGCT) has established itself as the power device of choice at
MV levels by offering the lowest costs, the highest reliability and
efficiency and the highest power densities. With only 4 or 5 standard
housing sizes, it covers a power range of 0.3 to 300 MW. The concept of
a “universal PEBB” has come significantly closer thanks to
standardised platforms and components (standard wafers, housings, gate
units, coolers, clamps etc.). Series-connection is simply achieved and
is destined to become simpler still in the foreseeable future. Parallel
operation, with its attendant uncertainties, remains unnecessary. The
presspack, denigrated in recent years, is once again recognised for its
simplicity, reliability, low inductance, inherent standardisation and
“modularity”, both for IGCTs and IGBTs and the wisdom of
decoupling high-energy DC-links from the switch assembly in VSIs is
gaining steady acceptance for both devices

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