Conference Paper

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

Dept. of Electr. Eng., California Univ., Los Angeles, CA
DOI: 10.1109/VLSIT.1999.799323 Conference: VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Source: IEEE Xplore

ABSTRACT We report an extensive study on the SOI body instability and the
noise constraint dependence on device scaling for sub-1 V RF SOI CMOS
applications. Also, the device parameters associated with these issues
are addressed

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    ABSTRACT: Low-frequency (LF) noise, a key figure-of-merit to evaluate device technology for RF systems on a chip, is a significant obstacle for CMOS technology, especially for partially depleted (PD) silicon-on-insulator (SOI) CMOS due to the well-known kink-induced noise overshoot. While the dc kink effect can be suppressed by either using body contact technologies or shifting toward fully depleted (FD) operation, the noise overshoot phenomena still resides at high frequency for either FD SOI or poor body-tied (BT) SOI CMOSFETs. In this paper, floating body-induced excess noise in SOI CMOS technology is addressed, including the impact from floating body effect, pre-dc kink operation, and gate overdrive, followed by the proposal of a universal LF excess noise model. As the physical mechanism behind excess noise is identified, this paper concludes with the suggestion of a device design methodology to optimize LF noise in SOI CMOSFET technology
    IEEE Transactions on Electron Devices 08/2001; · 2.06 Impact Factor