Conference Paper

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

Dept. of Electr. Eng., California Univ., Los Angeles, CA
DOI: 10.1109/VLSIT.1999.799323 Conference: VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Source: IEEE Xplore

ABSTRACT We report an extensive study on the SOI body instability and the
noise constraint dependence on device scaling for sub-1 V RF SOI CMOS
applications. Also, the device parameters associated with these issues
are addressed

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    ABSTRACT: AC floating body effects in PD SOI nMOSFETs operated at high temperature are investigated. Both source/body and drain/body junction diode characteristics are greatly influenced by temperature, significantly impacting the ac kink effect as well its low-frequency (LF) noise characteristics. This is especially true for the pre-dc kink operation at high temperature. The increase of junction thermal generation current becomes an important body charging source and induces the LF Lorentzian-like excess noise.
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    ABSTRACT: Low-frequency (LF) noise, a key figure-of-merit to evaluate device technology for RF systems on a chip, is a significant obstacle for CMOS technology, especially for partially depleted (PD) silicon-on-insulator (SOI) CMOS due to the well-known kink-induced noise overshoot. While the dc kink effect can be suppressed by either using body contact technologies or shifting toward fully depleted (FD) operation, the noise overshoot phenomena still resides at high frequency for either FD SOI or poor body-tied (BT) SOI CMOSFETs. In this paper, floating body-induced excess noise in SOI CMOS technology is addressed, including the impact from floating body effect, pre-dc kink operation, and gate overdrive, followed by the proposal of a universal LF excess noise model. As the physical mechanism behind excess noise is identified, this paper concludes with the suggestion of a device design methodology to optimize LF noise in SOI CMOSFET technology
    IEEE Transactions on Electron Devices 08/2001; 48(7-48):1428 - 1437. DOI:10.1109/16.930662 · 2.47 Impact Factor
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    ABSTRACT: An overview is given on the low-frequency (LF) noise of silicon-on-insulator (SOI) devices and technologies. In the first two parts, noise mechanisms specific for SOI are discussed, namely, the front–back-gate coupling in fully-depleted MOSFETs and the Lorentzian noise overshoot in floating-body operating transistors. In the next part, the impact of the technology (SOI substrate, gate stack processing, isolation module, …) on the LF noise is described. From this, it is derived that scaling below the 0.25 μm CMOS node did not result in the anticipated reduction of the 1/f noise with tfox or . This is related to the increasing amount of nitrogen incorporated in the thin SiON front gate oxides with thickness tfox. In the case of high-κ dielectrics it is frequently observed that these have a higher trap density compared to SiO2. On the other hand, today’s multigate SOI transistors seem to give rise to similar gate oxide trap densities and hence, 1/f noise, than their single-gate counterparts. In the last part, operational and circuit aspects will be discussed, which might have a beneficial impact on the LF noise performance.
    Solid-State Electronics 01/2007; 51(1-51):16-37. DOI:10.1016/j.sse.2006.12.003 · 1.50 Impact Factor
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