Conference Paper

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

Dept. of Electr. Eng., California Univ., Los Angeles, CA
DOI: 10.1109/VLSIT.1999.799323 Conference: VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Source: IEEE Xplore

ABSTRACT We report an extensive study on the SOI body instability and the
noise constraint dependence on device scaling for sub-1 V RF SOI CMOS
applications. Also, the device parameters associated with these issues
are addressed

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