Conference Paper

Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications

Dept. of Electr. Eng., California Univ., Los Angeles, CA
DOI: 10.1109/VLSIT.1999.799323 Conference: VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Source: IEEE Xplore


We report an extensive study on the SOI body instability and the
noise constraint dependence on device scaling for sub-1 V RF SOI CMOS
applications. Also, the device parameters associated with these issues
are addressed

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    ABSTRACT: AC floating body effects in PD SOI nMOSFETs operated at high temperature are investigated. Both source/body and drain/body junction diode characteristics are greatly influenced by temperature, significantly impacting the ac kink effect as well its low-frequency (LF) noise characteristics. This is especially true for the pre-dc kink operation at high temperature. The increase of junction thermal generation current becomes an important body charging source and induces the LF Lorentzian-like excess noise.
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    ABSTRACT: An overview is given on the low-frequency (LF) noise of silicon-on-insulator (SOI) devices and technologies. In the first two parts, noise mechanisms specific for SOI are discussed, namely, the front–back-gate coupling in fully-depleted MOSFETs and the Lorentzian noise overshoot in floating-body operating transistors. In the next part, the impact of the technology (SOI substrate, gate stack processing, isolation module, …) on the LF noise is described. From this, it is derived that scaling below the 0.25 μm CMOS node did not result in the anticipated reduction of the 1/f noise with tfox or . This is related to the increasing amount of nitrogen incorporated in the thin SiON front gate oxides with thickness tfox. In the case of high-κ dielectrics it is frequently observed that these have a higher trap density compared to SiO2. On the other hand, today’s multigate SOI transistors seem to give rise to similar gate oxide trap densities and hence, 1/f noise, than their single-gate counterparts. In the last part, operational and circuit aspects will be discussed, which might have a beneficial impact on the LF noise performance.
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