Conference Proceeding

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
02/1999; DOI:10.1109/COMMAD.1998.791638 ISBN: 0-7803-4513-4 pp.268 - 271 In proceeding of: Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Source: IEEE Xplore

ABSTRACT InAs/InP quantum well structures were grown by low pressure metal
organic chemical vapor deposition. During the growth, the As/P exchange
reaction and As carryover were monitored in-situ by surface
photoabsorption. We simulated the measured SPA signal using a multilayer
model and effective medium theory to obtain the As compositional profile
which was carried over into the InP layer

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Keywords

compositional profile
 
effective medium theory
 
measured SPA signal
 

Heedon Hwang