Hysteresis in Piezoelectric and Ferroelectric Materials

The Science of Hysteresis 01/2006; 3. DOI: 10.1016/B978-012480874-4/50022-1
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Available from: Dragan Damjanovic, Apr 14, 2015
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    • "Ferroelectric materials are of special interest to the developers to produce such devices in which spontaneous polarization can be switched, from one state to other state by applying an external electric field. These states can represent bits of information [1] [2]. There have been extensive research efforts to enhance the reliability of perovskite-based ferroelectric thin films for use in nonvolatile ferroelectric random access memory devices. "
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    ABSTRACT: The ferroelectric and fatigue properties of spray deposited K – substituted cesium nitrate: poly (vinyl alcohol) composite films have been studied. The XRD pattern confirms the presence of ferroelectric phase of CsNO3 in the composite films upto doping concentration of 7.5%. The elemental analysis has been studied using EDX measurements. It is observed the remanent polarization (Pr) increases linearly that with doping concentration and optimum value of Pr = 9.2 µC/cm2 was found. The fatigue measurements also show improvement in K - substituted composite films. The switching time has been found to reduce four times in the K – substituted films. The C – V characteristics of the composite films show the butterfly feature and also confirm presence of ferroelectricity in the composite films.
    IEEE Transactions on Dielectrics and Electrical Insulation 02/2015; 22(1):251-256. DOI:10.1109/TDEI.2014.004099 · 1.28 Impact Factor
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    • "A proper substitution in BaBi 2 Ta 2 O 9 (BBT) and BaBi 2 Nb 2 O 9 (BBN) is expected to provide this material with enhanced physical properties that meets the requirements for its application in NVRAM devices [7] [8]. It is widely accepted that the Bi 2 O 2 layers have a significant influence on the polar and electrical conductivity properties of bismuth based layered structures [9]. There has been a lot of research conducted to enhance their properties by the substitution of the Bi 3 þ ions by alternate cations. "
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    ABSTRACT: Barium bismuth samarium niobate Ba(Bi1-xSmx)(2)Nb2O9(x=0, 0.03, 0.05, and 0.10) ceramics have been fabricated successfully via molten salt synthesis route. The X-ray diffraction analysis revealed the existence of bismuth layered perovsldte phase with orthorhombic crystal structure in all the compositions studied. The dielectric and electrical conductivity properties were carried out in the 100 Hz to 1 MHz frequency range at 300 K. The dielectric constant and dielectric loss were found to decrease from 186 to 180 and 0.0966 to 0.0755 with increase in samarium content at 100 kHz. A decrease in dielectric constant maximum (epsilon(m)) and a shift in the temperature of dielectric maximum (T-m) from 438 K to 393 K with the increase in the samarium concentration had been observed.
    Ceramics International 07/2014; 2014(40):16365. DOI:10.1016/j.ceramint.2014.07.076 · 2.61 Impact Factor
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    • "Piezoelectric materials typically show strain vs. electric field loop curve, also known as the 'butterfly loop' [15]. This is used in memory applications, based on the polarization switching and the hysteretic polarization [15]. Similar butterfly curves were reported for the TiO 2 based memristor [1],[2], intended for memory applications. "
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    ABSTRACT: In recent times, there have been significant focus on the memristor which is classified as the fourth basic circuit element. In 2008, teams from HP-labs showed possible fabrication of nonlinear memory-dependent variable resistors using titanium dioxide (TiO2)-based materials. Memristance can be viewed as the generalized resistance which depends on the internal state of the device. In other words, memristance is charge dependent. In this context, it is interesting to pay attention to the reversible piezoelectric effect. Certain piezoelectric crystals and ceramics develop voltage when put under external mechanical stress (direct effect), or deform in shape under voltage (converse effect). In this paper, we propose to view the piezoelectric effect in terms of the memristance theory.
    IEEE Sensors Journal 10/2011; 11(10):2514-2517. DOI:10.1109/JSEN.2011.2114878 · 1.76 Impact Factor
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