Conference Paper

Pentacene thin film transistors and inverter circuits

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA
DOI: 10.1109/IEDM.1997.650442 Conference: Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Source: IEEE Xplore


Organic thin film transistors and simple electronic circuits have
been fabricated using the fused-ring small-molecule aromatic hydrocarbon
pentacene as the active material. Carrier field-effect mobilities
greater than 0.2 cm2/V-s were obtained for thin film
transistors fabricated on glass using low-temperature ion-beam deposited
silicon dioxide as the gate dielectric and thermally evaporated
pentacene as the active material. Using similar transistors, integrated
voltage inverters with voltage gain large enough to be useful for the
fabrication of electronic circuits have been fabricated

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    • "The gate and drain nodes of the pull-down transistor are connected, resulting in a diode-connected transistor. This configuration is, in contrast to the zero-load configuration, compatible with enhancement-mode transistors [14] (Fig. 2) and mildly depletion-mode transistors [15]. This type of logic therefore has some more robustness against large threshold-voltage variations of the load transistor and it provides faster circuits [1]. "
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    ABSTRACT: Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a V <sub>T</sub>-control gate. Both zero- V <sub>GS</sub>-load and diode-load logic are investigated. The noise margin of zero- V <sub>GS</sub>-load inverter increases from 1.15 V (single gate) to 2.8 V (dual gate) at 20 V supply voltage. Diode-load logic inverters show an improvement in noise margin from ~0 V to 0.7 V for single gate and dual gate inverters, respectively. These values can be increased significantly by optimizing the inverter topologies. As a result of this optimization, noise margins larger than 6 V for zero- V <sub>GS</sub>-load logic and 1.4 V for diode-load logic are obtained. Functional 99-stage ring oscillators with 2.27 μs stage delays and 64 bit organic RFID transponder chips, operating at a data rate of 4.3 kb/s, have been manufactured.
    IEEE Journal of Solid-State Circuits 06/2011; 46(5-46):1223 - 1230. DOI:10.1109/JSSC.2011.2116490 · 3.01 Impact Factor
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    • "Although pentacene is an excellent insulator, with resistivity around 10 -cm, evaporated pentacene films have a tendency to form a carrier accumulation channel at the substrate interface, and a positive gate voltage is often necessary to deplete the channel. As a result, current leakage through an unpatterned active layer can be significant [11]. To reduce the leakage between individual TFT's, we have employed a Corbino transistor layout where the source electrode forms a closed ring around the active TFT area, with the drain electrode located in the center. "
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    ABSTRACT: We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm<sup>2</sup>/V-s, on/off current ratio as large as 10<sup>8</sup>, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates
    IEEE Transactions on Electron Devices 07/1999; 46(6-46):1258 - 1263. DOI:10.1109/16.766895 · 2.47 Impact Factor
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    ABSTRACT: The performance of organic thin-film transistors (OTFTs) has improved significantly in the last several years and it now appears likely that they will find application in low-cost large-area electronic applications. Active-matrix displays are of special interest and integration of OTFTs with organic light-emitting devices (OLEDs) in all-organic displays is particularly attractive. The device requirements for active-matrix OLED displays are very similar to those of active-matrix liquid crystal displays (AMLCDs) and can be satisfied with OTFTs fabricated using stacked pentacene active layers. Such devices have demonstrated field-effect mobility near 1.5 cm<sup>2</sup>/V·s, on/off current ratio near 10<sup>8</sup>, near-zero threshold voltage, and subthreshold slope less than 1.6 V/decade. These characteristics are similar to those obtained with hydrogenated amorphous silicon (a-Si:H) devices and such devices would allow the use of polymeric substrates with advantages in weight, ruggedness, and cost compared to glass substrates currently used with a-Si:H devices in AMLCDs
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