Conference Proceeding

Electrical properties of buried oxide layers of low dose SIMOXstructures

Dept. of Phys., Leuven Univ.;
DOI:10.1109/SOI.1996.552491 ISBN: 0-7803-3315-2 pp.56-57 In proceeding of: SOI Conference, 1996. Proceedings., 1996 IEEE International
Source: IEEE Xplore

ABSTRACT Summary form only given. The bulk and defect conduction as well as electron trapping properties of relatively thin (100 nn) buried oxide (BOX) layers of SIMOX structures have been studied with special emphasis on the effects of the capping oxide layer present during the post-implant high temperature annealing

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Keywords

capping oxide layer present
 
electron trapping properties
 
special emphasis
 
Summary form