Conference Proceeding

Low frequency noise in MOSFETs: analysis and synthesis using wavelet-based decomposition

Dept. of Electr. & Comput. Eng., Florida Int. Univ., Miami, FL
11/1994; DOI:10.1109/TFSA.1994.467338 ISBN: 0-7803-2127-8 pp.346 - 348 In proceeding of: Time-Frequency and Time-Scale Analysis, 1994., Proceedings of the IEEE-SP International Symposium on
Source: IEEE Xplore

ABSTRACT The 1/f noise observed in MOSFET is widely believed to originate
from a uniform distribution of traps in the gate oxide. The resulting
power spectral density, the 1/f spectrum, can be seen as a superposition
of Lorentzian spectra. In this paper, we decompose the measured noise
power spectral density into components which are essentially Lorentzian
in nature. This decomposition is achieved by using iteratively the
wavelet transform on the signal and the subsequent details. The power
spectral densities of those details constitute the components of the
overall power spectral density of the analyzed signal. Our preliminary
results indicate that the hypothesis of “superposition of
Lorentzian spectra” model for 1/f noise in MOSFET is a plausible
one

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Keywords

1/f noise
 
1/f spectrum
 
analyzed signal
 
gate oxide
 
iteratively
 
Lorentzian spectra
 
Lorentzian spectra” model
 
MOSFET
 
plausible
 
power spectral density
 
traps
 
uniform distribution
 
wavelet