Conference Proceeding

Integrated BiCMOS process and circuit development using SPR

ETH-Zentrum, Zurich
11/1993; DOI:10.1109/IEMT.1993.398216 ISBN: 0-7803-1424-7 pp.97 - 102 In proceeding of: Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International
Source: IEEE Xplore

ABSTRACT An integrated process development environment is described.
Geometry information for process simulation is taken automatically from
a commercial layout tool, and process step information exists in a
high-level language databank. Doping information can be read by a device
simulator, permitting SPICE (simulation program with IC emphasis)-like
circuit simulation. This environment is presented in a BiCMOS
development context

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